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dc.creatorTrallero-Giner, Carlos Luises
dc.creatorMenéndez-Proupin, Eduardoes
dc.creatorSuárez Morell, Erices
dc.creatorPérez-Álvarez, Rolandoes
dc.creatorSantiago-Pérez, Darío G.es
dc.date.accessioned2024-05-06T09:57:45Z
dc.date.available2024-05-06T09:57:45Z
dc.date.issued2021-06
dc.identifier.issn2469-9950es
dc.identifier.issn2469-9969es
dc.identifier.urihttps://hdl.handle.net/11441/157665
dc.description.abstractTransition metal dichalcogenides (TMDs) are an exciting family of 2D materials; a member of this family, MoS₂, became the first studied monolayer semiconductor. In this paper, a generalized phenomenological continuum approach for the optical vibrations of the monolayer TMDs valid in the long-wavelength limit is developed. The equation of motions for nonpolar and polar oscillations include the phonon dispersion up to a quadratic approximation in the phonon wave vector. On the other hand, the polar modes satisfy coupled equations for the displacement vector and the inner electric field. The two-dimensional phonon dispersion curves for in-plane and out-of-plane oscillations are thoroughly analyzed. The model parameters are fitted from density functional perturbation theory calculations. The current formalism provides an effective tool to describe the phonon dispersion curves around the Γ point of the Brillouin zone for a large group of members of the TMD monolayers. A detailed evaluation of the intravalley Pekar-Fröhlich and the A₁-homopolar mode deformation potential coupling mechanisms is performed. The effects of metal ions and chalcogen atoms on polaron mass and binding energy are studied. It is argued that both mechanisms should be considered for a correct analysis of the properties of the polaron or of any process that involves the intraband transitions assisted by the electron-phonon interaction.es
dc.formatapplication/pdfes
dc.format.extent11 p.es
dc.language.isoenges
dc.publisherAmerican Physical Societyes
dc.titlePhenomenological model for long-wavelength optical modes in transition metal dichalcogenide monolayeres
dc.typeinfo:eu-repo/semantics/articlees
dc.type.versioninfo:eu-repo/semantics/publishedVersiones
dc.rights.accessRightsinfo:eu-repo/semantics/openAccesses
dc.contributor.affiliationUniversidad de Sevilla. Departamento de Física Aplicada Ies
dc.relation.projectIDFONDECYT No. 1170921es
dc.relation.publisherversionhttps://journals.aps.org/prb/abstract/10.1103/PhysRevB.103.235424es
dc.identifier.doi10.1103/PhysRevB.103.235424es
dc.contributor.groupUniversidad de Sevilla. FQM401: Simulación y Aplicación de Materialeses
dc.journaltitlePhysical Review B (condensed matter and materials physics)es
dc.publication.volumen103es
dc.publication.issue23es
dc.publication.initialPage235424es
dc.contributor.funderFondo Nacional de Desarrollo Científico y Tecnológico (FONDECYT). Chilees

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