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dc.creatorNúñez Martínez, Juanes
dc.creatorAvedillo de Juan, María Josées
dc.creatorQuintana Toledo, José Maríaes
dc.date.accessioned2024-01-25T12:00:04Z
dc.date.available2024-01-25T12:00:04Z
dc.date.issued2013-09
dc.identifier.citationNúñez Martínez, J., Avedillo de Juan, M.J. y Quintana Toledo, J.M. (2013). Novel pipeline architectures based on Negative Differential Resistance devices. Microelectronics Journal, 44 (9), 807-813. https://doi.org/10.1016/j.mejo.2013.06.012.
dc.identifier.issn0026-2692es
dc.identifier.urihttps://hdl.handle.net/11441/153994
dc.description.abstractDevices exhibiting Negative Differential Resistance (NDR) in their I-V characteristic are attractive from the design point of view and circuits exploiting it have been reported showing advantages in terms of performance and/or cost. In particular, logic circuits based on the monostable to bistable operating principle can be built from the operation of two series connected NDR devices with a clocked bias. Monostable to Bistable Logic Element (MOBILE) gates allow compact implementation of complex logic function like threshold gates and are very suitable for the implementation of latch-free fine grained pipelines. This pipelining relies on the self-latching feature of MOBILE operation. Conventionally, MOBILE gates are operated in a gate level pipelined fashion using a four-phase overlapped clock scheme. However other simpler, and higher through-output interconnection schemes are possible. This paper describes latch-free MOBILE pipeline architectures with a single clock and with a two phase clock scheme which strongly rely on distinctive characteristics of the MOBILE operating principle. Both the proposed architectures are analyzed and experimentally validated. The fabricated circuits use a well-known transistor NDR circuit (MOS-NDR) and an efficient MOBILE gate topology built on its basis. Both solutions are compared and their distinctive characteristics with respect to domino based solutions are pointed out.es
dc.formatapplication/pdfes
dc.format.extent7 p.es
dc.language.isoenges
dc.publisherElsevieres
dc.relation.ispartofMicroelectronics Journal, 44 (9), 807-813.
dc.rightsAttribution-NonCommercial-NoDerivatives 4.0 Internacional*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/*
dc.subjectNegative differential Resistance (NDR)es
dc.subjectFine-grain pipelinees
dc.subjectMonostable to Bi- stable Logic Elements (MOBILE)es
dc.subjectMOS-NDRes
dc.titleNovel pipeline architectures based on Negative Differential Resistance deviceses
dc.typeinfo:eu-repo/semantics/articlees
dc.type.versioninfo:eu-repo/semantics/acceptedVersiones
dc.rights.accessRightsinfo:eu-repo/semantics/openAccesses
dc.contributor.affiliationUniversidad de Sevilla. Departamento de Electrónica y Electromagnetismoes
dc.relation.projectIDTEC2010-18937es
dc.relation.projectIDTEC2011-28302es
dc.relation.publisherversionhttps://www.sciencedirect.com/science/article/pii/S0026269213001493es
dc.identifier.doi10.1016/j.mejo.2013.06.012es
dc.journaltitleMicroelectronics Journales
dc.publication.volumen44es
dc.publication.issue9es
dc.publication.initialPage807es
dc.publication.endPage813es
dc.contributor.funderMinisterio de Economía y Competitividad (MINECO). Españaes
dc.contributor.funderEuropean Commission (EC). Fondo Europeo de Desarrollo Regional (FEDER)es

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