Artículo
Operation limits for RTD-based MOBILE circuits
Autor/es | Quintana Toledo, José María
Avedillo de Juan, María José Núñez Martínez, Juan Pettenghi Roldán, Héctor |
Departamento | Universidad de Sevilla. Departamento de Electrónica y Electromagnetismo |
Fecha de publicación | 2009-02 |
Fecha de depósito | 2024-01-10 |
Publicado en |
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Resumen | Resonant-tunneling-diode (RTD)-based monostable-bistable logic element (MOBILE) circuits operate properly in a certain frequency range. They exhibit both a minimum operating frequency and a maximum one. From a design point ... Resonant-tunneling-diode (RTD)-based monostable-bistable logic element (MOBILE) circuits operate properly in a certain frequency range. They exhibit both a minimum operating frequency and a maximum one. From a design point of view, it should be desirable to have gates with a correct operation from dc up to the maximum operating frequency (i.e., without the minimum bound). This paper undertakes this problem by analyzing how transistors and RTDs interact in RTD-based circuits. Two malfunctions have been identified: the incorrect evaluation of inputs and the lack of self-latching operation. The difficulty to study these problems in an analytical way has been overcome by resorting to series expansions for both the RTD and the heterojunction field-effect transistor I- V characteristics in the points of interest. We have obtained analytical expression linking representative device parameters and technological setup, for a MOBILE-based circuit to operate correctly. |
Cita | Quintana Toledo, J.M., Avedillo de Juan, M.J., Núñez Martínez, J. y Pettenghi Roldán, H. (2009). Operation limits for RTD-based MOBILE circuits. IEEE Transactions on Circuits and Systems I: Regular Papers. https://doi.org/10.1109/TCSI.2008.925943. |
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