Ponencia
Vertically Stacked CMOS-compatible Photodiodes for Scanning Electron Microscopy
Autor/es | Gontard, Lionel C.
Leñero Bardallo, Juan Antonio Varela Feria, Francisco M. Carmona Galán, Ricardo |
Departamento | Universidad de Sevilla. Departamento de Electrónica y Electromagnetismo |
Fecha de publicación | 2020 |
Fecha de depósito | 2023-05-31 |
Publicado en |
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ISBN/ISSN | 978-172813320-1 02714310 |
Resumen | This paper reports the use of vertically stacked photodiodes as compact solid-state spectrometers for transmission scanning electron microscopy. SEM microscopes operate by illuminating the sample with accelerated electrons. ... This paper reports the use of vertically stacked photodiodes as compact solid-state spectrometers for transmission scanning electron microscopy. SEM microscopes operate by illuminating the sample with accelerated electrons. They can have one or more solid-state sensors. In this work we have tested a set of stacked photodiodes fabricated in a standard 180nm HV-CMOS technology without process modifications. We have measured their sensitivity to electron irradiation in the energy range between 10keV and 30keV. We have also assessed their radiation hardness. The experiments are compared with Monte Carlo simulations to investigate their spectral sensitivity. |
Agencias financiadoras | Agencia Estatal de Investigación. España Universidad de Cádiz European Union (UE). H2020 European Commission (EC). Fondo Europeo de Desarrollo Regional (FEDER) |
Identificador del proyecto | PGC2018-101538-A-I00
RTI2018-097088-B-C31 18INPPPR05 765866 US-1264940 |
Cita | Gontard, L.C., Leñero Bardallo, J.A., Varela Feria, F.M. y Carmona Galán, R. (2020). Vertically Stacked CMOS-compatible Photodiodes for Scanning Electron Microscopy. En International Symposium on Circuits and Systems (9181208-), Institute of Electrical and Electronics Engineers (IEEE). |
Ficheros | Tamaño | Formato | Ver | Descripción |
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Vertically Stacked.pdf | 1.125Mb | [PDF] | Ver/ | |