Artículo
Nanoimaging of Organic Charge Retention Effects: Implications for Nonvolatile Memory, Neuromorphic Computing, and High Dielectric Breakdown Devices
Autor/es | Zhang, Yingjie
Kang, Jun Pluchery, Olivier Caillard, Louis Chabal, Yves J. Wang, Lin-Wang Fernández Sanz, Javier Salmeron, Miquel |
Departamento | Universidad de Sevilla. Departamento de Química Física |
Fecha de publicación | 2019 |
Fecha de depósito | 2022-06-01 |
Publicado en |
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Resumen | While a large variety of organic and molecular materials have been found to exhibit charge memory effects, the underlying mechanism is not well-understood, which hinders rational device design. Here, we study the charge ... While a large variety of organic and molecular materials have been found to exhibit charge memory effects, the underlying mechanism is not well-understood, which hinders rational device design. Here, we study the charge retention mechanism of a nanoscale memory system, an organic monolayer on a silicon substrate, with Au nanoparticles on top serving as the electrical contact. Combining scanning probe imaging/manipulation and density functional simulations, we observe stable charge retention effects in the system and attributed it to polaron effects at the amine functional groups. Our findings can pave the way for applications in nonvolatile memory, neuromorphic computing, and high dielectric breakdown devices. |
Agencias financiadoras | Department of Energy. United States National Science Foundation (NSF). United States |
Identificador del proyecto | DE-AC02-05CH11231
CHE-1300180 612620 NN294952 |
Cita | Zhang, Y., Kang, J., Pluchery, O., Caillard, L., Chabal, Y.J., Wang, L.,...,Salmeron, M. (2019). Nanoimaging of Organic Charge Retention Effects: Implications for Nonvolatile Memory, Neuromorphic Computing, and High Dielectric Breakdown Devices. ACS Applied Nano Materials, 2 (8), 4711-4716. |
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