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Browsing Capítulos (Física Aplicada I) by Author "Archilla, Juan F. R."
Now showing items 1-6 of 6
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Chapter of Book
A Supersonic Crowdion in Mica Ultradiscrete Kinks with Energy between 40K Recoil and Transmission Sputtering
Archilla, Juan F. R.; Kosevich, Yuriy A.; Jiménez, Noé; Sánchez Morcillo, Víctor J.; García Raffi, Luis M. (Springer, 2015)In this work we analyze in detail the behaviour and properties of the kinks found in an one dimensional model for the close ...
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Chapter of Book
Classical and quantum nonlinear localized excitations in discrete systems
Romero Romero, Francisco; Archilla, Juan F. R.; Palmero Acebedo, Faustino; Sánchez-Rey, Bernardo; Álvarez Chillida, María Azucena; Cuevas-Maraver, Jesús; Romero Romero, José María (Transworld Research Network, 2005)Discrete breathers, or intrinsic localized modes, are spatially localized, time–periodic, nonlinear excitations that can ...
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Chapter of Book
Experimental observation of moving intrinsic localized modes in germanium
Archilla, Juan F. R.; Coelho, Sergio M.M.; Danie Auret, F.; Nyamhere, Cloud; Dubinko, Vladimir; Hizhnyakov, Vladimir (Springer, 2015)Deep level transient spectroscopy shows that defects created by alpha irradiation of germanium are annealed by low energy ...
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Chapter of Book
Moving breather collisions in the Peyrard-Bishop DNA model
Álvarez Chillida, María Azucena; Romero Romero, Francisco; Cuevas-Maraver, Jesús; Archilla, Juan F. R. (Springer, 2009)We consider collisions of moving breathers (MBs) in the Peyrard-Bishop DNA model. Two identical stationary breathers, ...
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Chapter of Book
Polaronic charge transport mechanism in DNA
Hennig, Dirk; Archilla, Juan F. R. (Elsevier, 2006)For the detailed understanding of the conduction mechanism in DNA we use models based on the concept of polaron and ...
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Chapter of Book
The origin of defects induced in ultra-pure germanium by Electron Beam Deposition
Coelho, Sergio M.M.; Archilla, Juan F. R.; Danie Auret, F.; Nel, Jackie M. (Springer, 2015)The creation of point defects in the crystal lattices of various semiconductors by subthreshold events has been reported ...