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Mostrando ítems 1-8 de 8
Artículo
Hybrid-Phase-Transition FET Devices for Logic Computation
(IEEE, 2020)
Hybrid-phase-transition FETs (HyperFETs), built by connecting a phase transition material (PTM) to the source terminal of a FET, are able to increase the ON-to- OFF current ratio. In this article, we describe a comprehensive ...
Artículo
Oscillatory Neural Networks Using VO2 Based Phase Encoded Logic
(Frontiers Media, 2021)
Nano-oscillators based on phase-transition materials are being explored for the implementation of different non-conventional computing paradigms. In particular, vanadium dioxide (VO2) devices are used to design autonomous ...
Artículo
Gate-Level Design Methodology for Side-Channel Resistant Logic Styles Using TFETs
(IEEE, 2021)
The design of secure circuits in emerging technologies is an appealing area that requires new efforts and attention as an effective solution to secure applications with power constraints. The paper deals with the optimized ...
Artículo
Power and Speed Evaluation of Hyper-FET Circuits
(2019-01)
Many emerging devices are currently being explored as potential alternatives to complementary metal–oxide–semiconductor technologies for overcoming power density and energy efficiency limitations. It is now generally ...
Artículo
Projection of Dual-Rail DPA Countermeasures in Future FinFET and Emerging TFET Technologies
(Association for Computing Machinery (ACM), 2020)
The design of near future cryptocircuits will require greater performance characteristics in order to be implemented in devices with very limited resources for secure applications. Considering the security against differential ...
Artículo
Impact of the RT-level architecture on the power performance of tunnel transistor circuits
(Wiley, 2018)
Tunnel field-effect transistors (TFETs) are one of the most attractive steep subthreshold slope devices currently being investigated as a means of overcoming the power density and energy inefficiency limitations of ...
Artículo
Phase Transition FETs for Improved Dynamic Logic Gates
(IEEE, 2018)
Transistors incorporating phase change materials (Phase Change FETs) are being investigated to obtain steep switching and a boost in the I ON /I OFF ratio and, thus, to solve power and energy limitations of CMOS technologies. ...
Artículo
Novel pipeline architectures based on Negative Differential Resistance devices
(Elsevier, 2013-09)
Devices exhibiting Negative Differential Resistance (NDR) in their I-V characteristic are attractive from the design point of view and circuits exploiting it have been reported showing advantages in terms of performance ...