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Artículo
A detailed study of the gate/drain voltage dependence of RTN in bulk pMOS transistors
(Elsevier, 2019)
Random Telegraph Noise (RTN)has attracted increasing interest in the last years. This phenomenon introduces variability in the electrical properties of transistors, in particular in deeply-scaled CMOS technologies, which ...
Artículo
Flexible Setup for the Measurement of CMOS Time-Dependent Variability with Array-Based Integrated Circuits
(IEEE, 2020)
This paper presents an innovative and automated measurement setup for the characterization of variability effects in CMOS transistors using array-based integrated circuits (ICs), through which a better understanding of ...