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Artículo
Impact of the RT-level architecture on the power performance of tunnel transistor circuits
(Wiley, 2018)
Tunnel field-effect transistors (TFETs) are one of the most attractive steep subthreshold slope devices currently being investigated as a means of overcoming the power density and energy inefficiency limitations of ...
Artículo
Phase Transition FETs for Improved Dynamic Logic Gates
(IEEE, 2018)
Transistors incorporating phase change materials (Phase Change FETs) are being investigated to obtain steep switching and a boost in the I ON /I OFF ratio and, thus, to solve power and energy limitations of CMOS technologies. ...