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dc.creatorMoreno García, Manueles
dc.creatorRío Fernández, Rocío deles
dc.creatorGuerra Vinuesa, Oscares
dc.creatorRodríguez Vázquez, Ángel Benitoes
dc.date.accessioned2019-12-02T15:37:33Z
dc.date.available2019-12-02T15:37:33Z
dc.date.issued2014
dc.identifier.citationMoreno García, M., Río Fernández, R.d., Guerra Vinuesa, O. y Rodríguez Vázquez, Á.B. (2014). 5×5 SPAD matrices for the study of the trade-offs between fill factor, dark count rate and crosstalk in the design of CMOS image sensors. En 10th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME) Grenoble, Francia: Institute of Electrical and Electronics Engineers.
dc.identifier.isbn978-1-4799-4994-6es
dc.identifier.urihttps://hdl.handle.net/11441/90664
dc.description.abstractCMOS Single Photon Avalanche Diodes (SPADs) are a dedicated type of photodetectors that are attracting increasing interest. Crosstalk and fill factor are magnitudes that become important when dealing with arrays of SPADs. There are trade-offs that involve these two magnitudes and dark count rate (DCR) which are of great interest for the implementation of image sensors. A set of 5×5 matrices of SPADs with different sizes and shapes is designed to study the relationships between FF, crosstalk and DCR, and conceive an accurate behavioural model of SPAD arrays. The testchip is fully operative and preliminary experimental results are presented.es
dc.description.sponsorshipOffice of Naval Research (USA) N000141410355es
dc.description.sponsorshipMinisterio de Economía y Competitividad IPT-2011-1625-430000, TEC2012-38921-C02-01es
dc.description.sponsorshipJunta de Andalucía P12-TIC-2338es
dc.formatapplication/pdfes
dc.language.isoenges
dc.publisherInstitute of Electrical and Electronics Engineerses
dc.relation.ispartof10th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME) (2014),
dc.rightsAttribution-NonCommercial-NoDerivatives 4.0 Internacional*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/*
dc.title5×5 SPAD matrices for the study of the trade-offs between fill factor, dark count rate and crosstalk in the design of CMOS image sensorses
dc.typeinfo:eu-repo/semantics/conferenceObjectes
dc.type.versioninfo:eu-repo/semantics/acceptedVersiones
dc.rights.accessrightsinfo:eu-repo/semantics/openAccesses
dc.contributor.affiliationUniversidad de Sevilla. Departamento de Electrónica y Electromagnetismoes
dc.relation.projectIDN000141410355es
dc.relation.projectIDIPT-2011-1625-430000es
dc.relation.projectIDTEC2012-38921-C02-01es
dc.relation.projectIDP12-TIC-2338es
dc.relation.publisherversionhttps://doi.org/10.1109/PRIME.2014.6872752es
dc.identifier.doi10.1109/PRIME.2014.6872752es
idus.format.extent4 p.es
dc.eventtitle10th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME)es
dc.eventinstitutionGrenoble, Franciaes

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Attribution-NonCommercial-NoDerivatives 4.0 Internacional
Except where otherwise noted, this item's license is described as: Attribution-NonCommercial-NoDerivatives 4.0 Internacional