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Large area heavily boron doped nano-crystalline diamond growth by MW-LA-PECVD [Póster]

 

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Opened Access Large area heavily boron doped nano-crystalline diamond growth by MW-LA-PECVD [Póster]
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Author: Taylor, Andy
Ashcheulov, Petr
Zivcova, Zuzana Vlckova
Remzová, M.
Kopeček, Jaromír
Hubík, P.
Klimša, Ladislav
Remes, Z.
Kavan, Ladislav
Beltrán, A.M.
Department: Universidad de Sevilla. Departamento de Ingeniería y Ciencia de los Materiales y del Transporte
Date: 2017
Document type: Presentation
Abstract: Diamond is a unique semiconductor with a wide bandgap which usually is easily doped with boron and is acknowledged as one of the best materials for electrochemical applications. Heavily boron doped, high quality single crystal synthetic diamond can...
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Cite: Taylor, A., Ashcheulov, P., Zivcova, Z.V., Remzová, M., Kopeček, J., Hubík, P.,...,Beltrán, A.M. (2017). Large area heavily boron doped nano-crystalline diamond growth by MW-LA-PECVD [Póster]. En De Beers 68th Diamond Conference, Warwick. United Kingdom.
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URI: https://hdl.handle.net/11441/87376

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