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A 26.5 nJ/px 2.64 Mpx/s CMOS Vision Sensor for Gaussian Pyramid Extraction


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dc.creator Suárez, Manuel es
dc.creator Fernández Berni, Jorge es
dc.creator Carmona Galán, Ricardo es
dc.creator Cabello, D. es
dc.creator Rodríguez Vázquez, Ángel Benito es 2018-05-15T14:10:26Z 2018-05-15T14:10:26Z 2014
dc.identifier.citation Suárez, M., Fernández Berni, J., Carmona Galán, R., Cabello, D. y Rodríguez Vázquez, Á.B. (2014). A 26.5 nJ/px 2.64 Mpx/s CMOS Vision Sensor for Gaussian Pyramid Extraction.
dc.identifier.issn 0018-9200 es
dc.identifier.issn 1558-173X es
dc.description.abstract This paper introduces a CMOS vision sensor to extract the Gaussian pyramid with an energy cost of 26.5 nJ/px at 2.64 Mpx/s, thus outperforming conventional solutions employing an imager and a separate digital processor. The chip, manufactured in a 0.18 μm CMOS technology, consists of an arrangement of 88 × 60 processing elements (PEs) which captures images of 176 × 120 resolution and performs concurrent parallel processing right at pixel level. The Gaussian pyramid is generated by using a switched-capacitor network. Every PE includes four photodiodes, four MiM capacitors, one 8-bit single-slope ADC and one CDS circuit, occupying 44 x 44 μm2. Suitability of the chip is assessed by using metrics pertaining to visual tracking es
dc.description.sponsorship Office of Naval Research (USA) N000141410355 es
dc.description.sponsorship Ministerio de Economía y Competitividad TEC2009-12686, TEC2012- 38921-C02, IPT-2011-1625-430000, IPC-20111009 es
dc.description.sponsorship Junta de Andalucía TIC 2338-2013 es
dc.description.sponsorship Xunta de Galicia EM2013/038 es
dc.format application/pdf es
dc.language.iso eng es
dc.publisher Institute of Electrical and Electronics Engineers es
dc.rights Atribución-NoComercial-SinDerivadas 3.0 Estados Unidos de América *
dc.rights.uri *
dc.title A 26.5 nJ/px 2.64 Mpx/s CMOS Vision Sensor for Gaussian Pyramid Extraction es
dc.type info:eu-repo/semantics/conferenceObject es
dc.type.version info:eu-repo/semantics/acceptedVersion es
dc.rights.accessrights info:eu-repo/semantics/openAccess es
dc.relation.projectID N000141410355 es
dc.relation.projectID TEC2009-12686 es
dc.relation.projectID TEC2012- 38921-C02 es
dc.relation.projectID IPT-2011-1625-430000 es
dc.relation.projectID IPC-20111009 es
dc.relation.projectID TIC 2338-2013 es
dc.relation.projectID EM2013/038 es
dc.relation.publisherversion es
dc.identifier.doi 10.1109/ESSCIRC.2014.6942084 es
idus.format.extent 4 p. es
dc.publication.initialPage 311 es
dc.publication.endPage 314 es
dc.eventtitle IEEE European Solid State Circuits Conference es
dc.eventinstitution Venice Lydo (Italia) es
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