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Structural and optical changes induced by incorporation of antimony into InAs/GaAs(001) quantum dots

 

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Opened Access Structural and optical changes induced by incorporation of antimony into InAs/GaAs(001) quantum dots
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Author: Taboada, Alfonso G.
Sánchez, A. M.
Beltrán, A.M.
Bozkurt, M.
Alonso-Álvarez, Diego
Alén, Benito
Rivera, A.
Ripalda, José María
Llorens Montolio, José Manuel
Martín-Sánchez, Javier
González Díez, Yolanda
Ulloa, J. M.
García Martínez, Jorge Manuel
Molina, Sergio I.
Koenraad, P.M.
Department: Universidad de Sevilla. Departamento de Ingeniería y Ciencia de los Materiales y del Transporte
Date: 2010
Published in: Physical Review B, 82 (23), 235316-1-235316-9.
Document type: Article
Abstract: We present experimental evidence of Sb incorporation inside InAs/GaAs 001 quantum dots exposed to an antimony flux immediately before capping with GaAs. The Sb composition profile inside the nanostructures as measured by cross-sectional scanning tunneling and electron transmission microscopies show two differentiated regions within the quantum dots, with an Sb rich alloy at the tip of the quantum dots. Atomic force microscopy and transmission electron microscopy micrographs show increased quantum-dot height with Sb flux exposure. The evolution of the reflection high-energy electron-diffraction pattern suggests that the increased height is due to changes in the quantum-dot capping process related to the presence of segregated Sb atoms. These structural and compositional changes result in a shift of the room-temperature photoluminescence emission from 1.26 to 1.36 m accompanied by an order of magnitude increase in the room-temperature quantum-dot luminescence intensity.
Cite: Taboada, A.G., Sánchez, A.M., Beltrán, A.M., Bozkur, M., Alonso-Álvarez, D., Alén, B.,...,Koenraad, P.M. (2010). Structural and optical changes induced by incorporation of antimony into InAs/GaAs(001) quantum dots. Physical Review B, 82 (23), 235316-1-235316-9.
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URI: http://hdl.handle.net/11441/68348

DOI: 10.1103/PhysRevB.82.235316

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