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Compositional analysis of InAs-GaAs-GaSb heterostructures by Low-Loss Electron Energy Loss Spectroscopy

 

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Opened Access Compositional analysis of InAs-GaAs-GaSb heterostructures by Low-Loss Electron Energy Loss Spectroscopy
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Author: Beltrán, A.M.
Ben, Teresa
Sánchez, A. M.
Gass, M.H.
Taboada, Alfonso G.
Ripalda, José María
Molina, Sergio I.
Department: Universidad de Sevilla. Departamento de Ingeniería y Ciencia de los Materiales y del Transporte
Date: 2013
Published in: Journal of Physics: Conference Series, 471
Document type: Article
Abstract: As an alternative to Core-Loss Electron Energy Loss Spectroscopy, Low-Loss EELS is suitable for compositional analysis of complex heterostructures, such as the InAs-GaAsGaSb system, since in this energy range the edges corresponding to these elements are better defined than in Core-Loss. Furthermore, the analysis of the bulk plasmon peak, which is present in this energy range, also provides information about the composition. In this work, compositional information in an InAs-GaAs-GaSb heterostructure has been obtained from Low-Loss EEL spectra.
Cite: Beltrán, A.M., Ben, T., Sánchez, A.M., Gass, M.H., Taboada, A.G., Ripalda, J.M. y Molina, S.I. (2013). Compositional analysis of InAs-GaAs-GaSb heterostructures by Low-Loss Electron Energy Loss Spectroscopy. Journal of Physics: Conference Series, 471
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URI: http://hdl.handle.net/11441/68347

DOI: 10.1088/1742-6596/471/1/012012

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