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Room temperature synthesis of porous SiO2 thin films by plasma enhanced chemical vapor deposition

Opened Access Room temperature synthesis of porous SiO2 thin films by plasma enhanced chemical vapor deposition

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Autor: Barranco Quero, Ángel
Cotrino Bautista, José
Yubero Valencia, Francisco
Espinós Manzorro, Juan Pedro
Rodríguez González-Elipe, Agustín
Departamento: Universidad de Sevilla. Departamento de Química Inorgánica
Fecha: 2004-07
Publicado en: Journal of Vacuum Science and Technology A, 22 (4), 1275-1284.
Tipo de documento: Artículo
Resumen: Synthesis of porous SiO2 thin films in room temperature was carried out using plasma enhanced chemical vapor deposition (CVD) in an electron cyclotron resonance microwave reactor with a downstream configuration.The gas adsorption properties and the type of porosity of the SiO2 thin films were assessed by adsorption isotherms of toluene at room temperature.The method could also permit the tailoring synthesis of thin films when both composition and porosity can be simultaneously and independently controlled. The result shows that it is possible to control the microstructure of oxide thin films deposited by room temperature plasma enhanced chemical vapor depositon (PECVD) by scarificial polymeric organic layers.
Cita: Barranco Quero, Á., Cotrino Bautista, J., Yubero Valencia, F., Espinós, J.P. y Rodríguez González-Elipe, A. (2004). Room temperature synthesis of porous SiO2 thin films by plasma enhanced chemical vapor deposition. Journal of Vacuum Science and Technology A, 22 (4), 1275-1284.
Tamaño: 765.8Kb
Formato: PDF

URI: http://hdl.handle.net/11441/63465

DOI: 10.1116/1.1761072

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