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Plasma-enhanced chemical vapor deposition of SiO2 from a Si(CH3)3Cl precursor and mixtures Ar/O2 as plasma gas

Opened Access Plasma-enhanced chemical vapor deposition of SiO2 from a Si(CH3)3Cl precursor and mixtures Ar/O2 as plasma gas

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Autor: Barranco Quero, Ángel
Cotrino Bautista, José
Yubero Valencia, Francisco
Girardeau, T.
Camelio, S.
Clerc, C.
Rodríguez González-Elipe, Agustín
Departamento: Universidad de Sevilla. Departamento de Física Atómica, Molecular y Nuclear
Universidad de Sevilla. Departamento de Química Inorgánica
Fecha: 2003-07
Publicado en: Journal of Vacuum Science and Technology A, 21 (4), 900-905.
Tipo de documento: Artículo
Resumen: Silicon dioxide thin films have been prepared at room temperature by remote plasma-enhanced chemical vapor deposition in a downstream reactor by using Si(CH3)3Cl as a volatile precursor and a microwave electron cyclotron resonance external source. Experiments are done at constant pressure by changing the relative amount of Ar species R in the plasma gas. The aim was to obtain thin films with low density and, therefore, low refractive index. Characterization of the species of the plasma is carried out by optical emission spectroscopy. The changes of the plasma conditions are correlated with the growing rate and microstructure of the films, the latter determined by atomic force microscopy and infrared spectroscopy. It is found that the growing rate of the films decreases and their roughness increases as R increases. The optical properties of SiO2 thin films are analyzed by optical ellipsometry. A decrease in the refractive index is found for the films grown with high values of R. The po...
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Cita: Barranco Quero, Á., Cotrino Bautista, J., Yubero Valencia, F., Girardeau, T., Camelio, S., Clerc, C. y Rodríguez González-Elipe, A. (2003). Plasma-enhanced chemical vapor deposition of SiO2 from a Si(CH3)3Cl precursor and mixtures Ar/O2 as plasma gas. Journal of Vacuum Science and Technology A, 21 (4), 900-905.
Tamaño: 193.0Kb
Formato: PDF

URI: http://hdl.handle.net/11441/63456

DOI: 10.1116/1.1577134

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