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Plasma-enhanced chemical vapor deposition of SiO2 from a Si(CH3)3Cl precursor and mixtures Ar/O2 as plasma gas

 

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Opened Access Plasma-enhanced chemical vapor deposition of SiO2 from a Si(CH3)3Cl precursor and mixtures Ar/O2 as plasma gas
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Author: Barranco Quero, Ángel
Cotrino Bautista, José
Yubero Valencia, Francisco
Girardeau, T.
Camelio, S.
Clerc, C.
Rodríguez González-Elipe, Agustín
Department: Universidad de Sevilla. Departamento de Física Atómica, Molecular y Nuclear
Universidad de Sevilla. Departamento de Química Inorgánica
Date: 2003-07
Published in: Journal of Vacuum Science and Technology A, 21 (4), 900-905.
Document type: Article
Abstract: Silicon dioxide thin films have been prepared at room temperature by remote plasma-enhanced chemical vapor deposition in a downstream reactor by using Si(CH3)3Cl as a volatile precursor and a microwave electron cyclotron resonance external source. E...
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Cite: Barranco Quero, Á., Cotrino Bautista, J., Yubero Valencia, F., Girardeau, T., Camelio, S., Clerc, C. y Rodríguez González-Elipe, A. (2003). Plasma-enhanced chemical vapor deposition of SiO2 from a Si(CH3)3Cl precursor and mixtures Ar/O2 as plasma gas. Journal of Vacuum Science and Technology A, 21 (4), 900-905.
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URI: http://hdl.handle.net/11441/63456

DOI: 10.1116/1.1577134

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