Repositorio de producción científica de la Universidad de Sevilla

Biasing CMOS amplifiers using MOS transistors in subthreshold region

 

Advanced Search
 
Opened Access Biasing CMOS amplifiers using MOS transistors in subthreshold region
Cites

Show item statistics
Icon
Export to
Author: Bikumandla, Manoj
González Carvajal, Ramón
Ramírez Angulo, Jaime
Urquidi, Carlos
López Martín, Antonio
Department: Universidad de Sevilla. Departamento de Ingeniería Electrónica
Date: 2004
Published in: IEICE Electronics Express, 1(12), 339-345
Document type: Article
Abstract: The implementation of large-valued floating resistive elements using MOS transistors in subthreshold region is addressed. The application of these elements to bias wideband AC coupled amplifiers is discussed. Simple schemes to generate the gate control voltages for the MOS transistors implementing large resistors so that they remain in high resistive state with large signal variations are discussed. Experimental results of a test chip prototype in 0.5-µm CMOS technology are presented that verify the proposed technique.
Size: 308.1Kb
Format: PDF

URI: http://hdl.handle.net/11441/23363

DOI: http://doi.org/10.1587/elex.1.339

See editor´s version

This work is under a Creative Commons License: 
Attribution-NonCommercial-NoDerivatives 4.0 Internacional

This item appears in the following Collection(s)