• Artículo
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      Effect of dislocations on electrical and electron transport properties of InN thin films. I. Strain relief and formation of a dislocation network 

      Lebedev, Vladim B.; Cimalla, Volker; Pezoldt, J.; Himmerlich, Marcel; Krischok, Stefan; Lozano Suárez, Juan Gabriel; González Robledo, David (American Institute of Physics, 2006-11)
      The strain-relaxation phenomena and the formation of a dislocation network in 2H-InN epilayers during molecular beam ...
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      Engineering of III-Nitride Semiconductors on Low Temperature Co-fired Ceramics 

      Manuel Delgado, José Manuel; Jiménez Ríos, Juan Jesús; Morales Sánchez, Francisco Miguel; Lacroix, Bertrand; Santos Izquierdo-Bueno, Antonio Jesús; García Roja, Rafael; Blanco Ollero, Eduardo; Domínguez de la Vega, Manuel; Ramírez del Solar, Milagrosa; Beltrán, Ana M.; Alexandrov, D.; Tot, J.; Dubreuil, R.; Videkov, V.; Andreev, S.; Tzaneva, B.; Bartsch, H.; Breiling, J.; Pezoldt, J.; Fischer, M.; Müller, J. (Nature Publishing Group, 2018)
      This work presents results in the feld of advanced substrate solutions in order to achieve high crystalline quality ...