Now showing items 1-2 of 2

    • IconStructural and optical changes induced by incorporation of antimony into InAs/GaAs(001) quantum dots  [Article]

      Taboada, Alfonso G.; Sánchez, A. M.; Beltrán, A.M.; Bozkurt, M.; Alonso-Álvarez, Diego; Alén, Benito; Rivera, A.; Ripalda, José María; Llorens Montolio, José Manuel; Martín-Sánchez, Javier; González Díez, Yolanda; Ulloa, J. M.; García Martínez, Jorge Manuel; Molina, Sergio I.; Koenraad, P.M. (American Physical Society, 2010)
      We present experimental evidence of Sb incorporation inside InAs/GaAs 001 quantum dots exposed to an antimony flux immediately before capping with GaAs. The Sb composition profile inside the nanostructures as measured by ...
    • IconTheoretical modelling of quaternary GaInAsSb/GaAs self-assembled quantum dots  [Article]

      Llorens Montolio, José Manuel; Taboada, Alfonso G.; Ripalda, José María; Alonso-Álvarez, Diego; Alén, Benito; Martín-Sánchez, Javier; García Martínez, Jorge Manuel; González Díez, Yolanda; Sánchez, A. M.; Beltrán, A.M.; Galindo, P. L.; Molina, Sergio I. (Institute of Physics Publishing, 2010)
      InAs/GaAs quantum dots exposed to Sb after growth exhibit spectral changes. We study in the present paper an idealized nanostructure consisting of a homogeneous distribution of the quaternary GaInAsSb surrounded by a barrier ...