Now showing items 1-3 of 3

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      5×5 SPAD matrices for the study of the trade-offs between fill factor, dark count rate and crosstalk in the design of CMOS image sensors  [Presentation]

      Moreno García, Manuel; Río Fernández, Rocío del; Guerra Vinuesa, Oscar; Rodríguez Vázquez, Ángel Benito (Institute of Electrical and Electronics Engineers, 2014)
      CMOS Single Photon Avalanche Diodes (SPADs) are a dedicated type of photodetectors that are attracting increasing interest. Crosstalk and fill factor are magnitudes that become important when dealing with arrays of SPADs. ...
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      Characterization-Based Modeling of Retriggering and Afterpulsing for Passively Quenched CMOS SPADs  [Article]

      Moreno García, Manuel; Pancheri, Lucio; Perenzoni, Matteo; Río Fernández, Rocío del; Guerra Vinuesa, Oscar; Rodríguez Vázquez, Ángel Benito (Institute of Electrical and Electronics Engineers, 2019)
      The current trend in the design of systems based on CMOS SPADs is to adopt smaller technological nodes, allowing the co-integration of additional electronics for the implementation of complex digital systems on chip. Due ...
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      CMOS SPADs selection, modeling and characterization towards image sensors implementation  [Presentation]

      Moreno García, Manuel; Guerra Vinuesa, Oscar; Río Fernández, Rocío del; Pérez Verdú, Belén; Rodríguez Vázquez, Ángel Benito (Institute of Electrical and Electronics Engineers, 2012)
      The selection, modeling and characterization of Single Photon Avalanche Diodes (SPADs) are presented. Working with the standard 180nm UMC CMOS process, different SPAD structures are proposed in combination with several ...