A High-voltage Floating Level Shifter for a Multi-stage Charge-pump in a Standard 1.8 V/3.3 V CMOS Process

Palomeque Mangut, DavidRodríguez Vázquez, Ángel BenitoDelgado Restituto, Manuel 2024-07-302024-07-302022Palomeque Mangut, D., Rodríguez Vázquez, Á.B. y Delgado Restituto, M. (2022). A High-voltage Floating Level Shifter for a Multi-stage Charge-pump in a Standard 1.8 V/3.3 V CMOS Process. AEU - International Journal of Electronics and Communications, 156, 154389. https://doi.org/10.1016/j.aeue.2022.154389.1618-03991434-8411https://hdl.handle.net/11441/161767This paper proposes a high-voltage floating level shifter with a periodically-refreshed charge pump topology. Designed and fabricated in a standard 1.8 V/3.3 V CMOS process, the circuit can withstand shifting voltages from 3 V to 8.5 V with a delay response of 1.8 ns and occupies 0.008 mm2. The proposed circuit has been used in a multi-stage charge pump for programming its voltage conversion ratio. Experimental results show that the level shifters successfully enable/disable the stages of the charge pump, thus modifying its output voltage between 5.35 V and 12.4 V for an output current of 3 mA.application/pdf6 p.engAttribution-NonCommercial-NoDerivatives 4.0 Internacionalhttp://creativecommons.org/licenses/by-nc-nd/4.0/Level shifterGate driverCMOSCharge pumpHigh-voltage complianceA High-voltage Floating Level Shifter for a Multi-stage Charge-pump in a Standard 1.8 V/3.3 V CMOS Processinfo:eu-repo/semantics/articleinfo:eu-repo/semantics/openAccesshttps://doi.org/10.1016/j.aeue.2022.154389