2022-07-192022-07-192022-08Arca Cebrián, F., Méndez, J.P., Ortiz, M. y Ariza Moreno, M.d.P. (2022). Strain-tuning of transport gaps and semiconductor-to-conductor phase transition in twinned graphene. Acta Materialia, 234, 117987.1359-6454https://hdl.handle.net/11441/135572117987We show, through the use of the Landauer-Büttiker (LB) formalism and a tight-binding (TB) model, that the transport gap of twinned graphene can be tuned through the application of a uniaxial strain in the direction normal to the twin band. Remarkably, we find that the transport gap Egap bears a square-root dependence on the control parameter x − c , where x is the applied uniaxial strain and c ∼ 19% is a critical strain. We interpret this dependence as evidence of criticality underlying a continuous phase transition, with x − c playing the role of control parameter and the transport gap Egap playing the role of order parameter. For x < c , the transport gap is non-zero and the material is semiconductor, whereas for x > c the transport gap closes to zero and the material becomes conductor, which evinces a semiconductor-to-conductor phase transition. The computed critical exponent of 1/2 places the transition in the meanfield universality class, which enables far-reaching analogies with other systems in the same class.application/pdf6 p.engAttribution-NonCommercial-NoDerivatives 4.0 Internacionalhttp://creativecommons.org/licenses/by-nc-nd/4.0/GrapheneGeometrical twinningPhase transformationCritical phenomenainfo:eu-repo/semantics/articleinfo:eu-repo/semantics/openAccess10.1016/j.actamat.2022.117987