Ortega, J. J.Ortiz Hernández, A. A.Berumen Torres, J.Escobar-Galindo, RamónMéndez García, V. H.Araiza, J.J.2023-06-132023-06-132016-10-15Ortega, J.J., Ortiz Hernández, A.A., Berumen Torres, J., Escobar-Galindo, R., Méndez García, V.H. y Araiza, J.J. (2016). Ag-N dual acceptor doped p-type ZnO thin films by DC reactive magnetron co-sputtering. Materials Letters, 181, 12-15. https://doi.org/10.1016/j.matlet.2016.06.005.0167-577X (impreso)1873-4979 (online)https://hdl.handle.net/11441/147158ZnO p-type thin films were deposited by dual acceptor co-doping using nitrogen and silver via DC reactive magnetron co-sputtering. As precursor material were used a Zn and an Ag metallic targets with a purity of 99.99%. X-ray energy dispersive spectroscopy (EDX) confirmed the presence of Ag and N in ZnO: Ag,N films. The electrical properties were explored by Hall Effect measurement and showed a low hole concentration for the as-deposited ZnO: Ag,N film. However, after annealing treatment, the films remained p-type and the electrical properties were improved significantly. The best electrical properties showed a low resistivity of 8.56 x 103 Ωcm, Hall mobility of 23 cm2 /Vs and a very high hole concentration of 3.17 x 1019 cm-3.application/pdf4engAttribution-NonCommercial-NoDerivatives 4.0 Internacionalhttp://creativecommons.org/licenses/by-nc-nd/4.0/P-type znoAg-n doping znoHigh hole concentrationCo-sputteringinfo:eu-repo/semantics/articleinfo:eu-repo/semantics/openAccesshttps://doi.org/10.1016/j.matlet.2016.06.005