Brandano, DavideDelgado Restituto, ManuelRuiz Amaya, JesúsRodríguez Vázquez, Ángel Benito2019-12-042019-12-042007Brandano, D., Delgado Restituto, M., Ruiz Amaya, J. y Rodríguez Vázquez, Á.B. (2007). A 5.3mW, 2.4GHz ESD protected Low-Noise Amplifier in a 0.13μm RFCMOS technology. En 18th European Conference on Circuit Theory and Design (72-75), Sevilla, España: Institute of Electrical and Electronics Engineers.978-1-4244-1341-6https://hdl.handle.net/11441/90722An Electrostatic Discharge (ESD) protected Low- Noise Amplifier (LNA) for the 2.4 GHz ISM band designed in a 0.13 mum standard RFCMOS technology is presented. The amplifier, including packaging effects, achieves 16.8 dB power gain, reflexion coefficients S 11 , S 22 < -30 dB over the 2.4 GHz ISM band, a peak noise figure of 1.8 dB, and an IIP 3 of 1 dBm, while drawing less than 4.5 mA dc biasing current from the 1.2 V power supply. Further, the LNA withstands a Human Body Model (HBM) ESD stress up to plusmn2.0 kV, by means of the additional custom protection circuitry.application/pdfengAttribution-NonCommercial-NoDerivatives 4.0 Internacionalhttp://creativecommons.org/licenses/by-nc-nd/4.0/LNAElectrostatic discharge (ESD) protectionNoise figureRF CMOSA 5.3mW, 2.4GHz ESD protected Low-Noise Amplifier in a 0.13μm RFCMOS technologyinfo:eu-repo/semantics/conferenceObjectinfo:eu-repo/semantics/openAccesshttps://doi.org/10.1109/ECCTD.2007.4529539