Sánchez Marcos, J.Ochando, I.M.Escobar-Galindo, RamónMartínez Morilla, R.Prieto, C.2023-06-232023-06-232010-07Sánchez Marcos, J., Ochando, I.M., Escobar-Galindo, R., Martínez Morilla, R. y Prieto, C. (2010). Optical and transport properties of Ti-doped In2O3 thin films prepared by electron beam physical vapour deposition. physica status solidi (a), 207 (7), 1549-1553. https://doi.org/10.1002/pssa.200983717.1862-6300 (impreso)1862-6319 (online)https://hdl.handle.net/11441/147439Ti-doped In2O3 (ITiO) thin films have been prepared by electron beam physical vapour deposition (EB-PVD). Their optical and electrical properties are studied for the obtained compositions. After oxygen annealing all samples show excellent optical transparence; additionally, maximum values for conductivity are obtained for samples with titanium contents near 6 at.%, with typical resistivity values of 4 x 105 V cm. Finally, the band-gap energy evolution is studied for the set of samples.application/pdf5engAttribution-NonCommercial-NoDerivatives 4.0 Internacionalhttp://creativecommons.org/licenses/by-nc-nd/4.0/Optical and transport properties of Ti-doped In2O3 thin films prepared by electron beam physical vapour depositioninfo:eu-repo/semantics/articleinfo:eu-repo/semantics/openAccesshttps://doi.org/10.1002/pssa.200983717