2022-08-102022-08-102018Zapata Solvas, E., Gómez García, D., Domínguez Rodríguez, A. y Lee, W.E. (2018). High temperature creep of 20 vol%. SiC-HfB2 UHTCs up to 2000 °C and the effect of La2O3 addition. Journal of the European Ceramic Society, 38 (1), 47-56.0955-2219https://hdl.handle.net/11441/136095High temperature compressive creep of SiC-HfB2 UHTCs up to 2000 °C has been studied. Microstructural analysis after deformation reveals formation of new phases in the Hf-B-Si and Hf-B-Si-C systems, which are responsible for the poor creep resistance. RE oxide additions have a negative effect reducing the creep resistance of SiC-HfB2 UHTCs. A simplistic analysis for the required creep resistance is described, indicating that only SiC-HfB2 UHTCs could withstand re-entry conditions for 5 min in a single use. However, RE oxide addition to SiC-HfB2 UHTCs does not provide the required creep resistance for them to be candidate materials for hypersonic applications.application/pdf10 p.engAttribution-NonCommercial-NoDerivatives 4.0 Internacionalhttp://creativecommons.org/licenses/by-nc-nd/4.0/Ultra-high temperature ceramicsCreepCavitation damageReaction damageLimited ductilityinfo:eu-repo/semantics/articleinfo:eu-repo/semantics/openAccesshttps://doi.org/10.1016/j.jeurceramsoc.2017.08.028