Article
TFET-based Well Capacity Adjustment in Active Pixel Sensor for Enhanced High Dynamic Range
Author/s | Fernández Berni, Jorge
Niemier, M. Hu, X.S. Lu, H. Li, W. Fay, P. Carmona Galán, Ricardo Rodríguez Vázquez, Ángel Benito |
Department | Universidad de Sevilla. Departamento de Electrónica y Electromagnetismo |
Publication Date | 2017 |
Deposit Date | 2018-04-23 |
Published in |
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Abstract | We present a Tunnel Field-Effect Transistor (TFET)-based pixel circuit for well capacity adjustment that does not require subthreshold operation on the part of the reset transistor. In CMOS, this subthreshold operation ... We present a Tunnel Field-Effect Transistor (TFET)-based pixel circuit for well capacity adjustment that does not require subthreshold operation on the part of the reset transistor. In CMOS, this subthreshold operation leads to temporal noise, distortion and Fixed Pattern Noise (FPN), becoming a primary limiting performance factor. In the proposed circuit, we exploit the asymmetric conduction associated with TFETs. This property, arising from the inherent physical structure of the device, provides the selective well adjustments during photo-integration which are demanded for achieving High Dynamic Range (HDR). A GaNbased heterojunction TFET has been designed according to the specific requirements for this application |
Project ID. | TEC2015-66878-C3-1-R
TIC 2338-2013 N000141410355 1344531 |
Citation | Fernández Berni, J., Niemier, M., Hu, X.S., Lu, H., Li, W., Fay, P.,...,Rodríguez Vázquez, Á.B. (2017). TFET-based Well Capacity Adjustment in Active Pixel Sensor for Enhanced High Dynamic Range. Electronics Letters, 53 (9), 427-. |
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