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dc.creatorBaena Oliva, María del Carmenes
dc.creatorJuan Chico, Jorgees
dc.creatorBellido Díaz, Manuel Jesúses
dc.creatorRuiz de Clavijo Vázquez, Paulinoes
dc.creatorJiménez Fernández, Carlos Jesúses
dc.creatorValencia Barrero, Manueles
dc.date.accessioned2017-01-19T12:16:49Z
dc.date.available2017-01-19T12:16:49Z
dc.date.issued2002
dc.identifier.citationBaena Oliva, M.d.C., Juan Chico, J.,...,Valencia Barrero, M. (2002). Measurement of the Switching Activity of CMOS Digital Circuits at the Gate Level. En Integrated Circuit Design. Power and Timing Modeling, Optimization and Simulation. PATMOS 2002. Lecture Notes in Computer Science, vol 2451 (pp. 353-362). Berlin: Springer.
dc.identifier.isbn978-3-540-44143-4es
dc.identifier.issn0302-9743es
dc.identifier.urihttp://hdl.handle.net/11441/52483
dc.description.abstractAccurate estimation of switching activity is very important in digital circuits. In this paper we present a comparison between the evaluation of the switching activity calculated using logic (Verilog) and electrical (HSPICE) simulators. We also study how the variation on the delay model (min, typ, max) and parasitic effects affect the number of transitions in the circuit. Results show a variable and significant overestimation of this measurement using logic simulators even when including postlayout effects. Furthermore, we show the contribution of glitches to the overall switching activity, giving that the treatment of glitches in conventional logic simulators is the main cause of switching activity overestimation.es
dc.description.sponsorshipMinisterio de Ciencia y Tecnología TIC 2000-1350
dc.description.sponsorshipMinisterio de Ciencia y Tecnología TIC 2002-2283
dc.formatapplication/pdfes
dc.language.isoenges
dc.publisherSpringeres
dc.relation.ispartofIntegrated Circuit Design. Power and Timing Modeling, Optimization and Simulation. PATMOS 2002. Lecture Notes in Computer Science, vol 2451es
dc.rightsAttribution-NonCommercial-NoDerivatives 4.0 Internacional*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/*
dc.titleMeasurement of the Switching Activity of CMOS Digital Circuits at the Gate Leveles
dc.typeinfo:eu-repo/semantics/bookPartes
dcterms.identifierhttps://ror.org/03yxnpp24
dc.type.versioninfo:eu-repo/semantics/acceptedVersiones
dc.rights.accessRightsinfo:eu-repo/semantics/openAccesses
dc.contributor.affiliationUniversidad de Sevilla. Departamento de Tecnología Electrónicaes
dc.relation.projectIDTIC 2000-1350es
dc.relation.projectIDTIC 2002-2283es
dc.relation.publisherversionhttp://link.springer.com/chapter/10.1007%2F3-540-45716-X_35es
dc.identifier.doi10.1007/3-540-45716-X_35es
idus.format.extent10es
dc.publication.initialPage353es
dc.publication.endPage362es
dc.relation.publicationplaceBerlines
dc.contributor.funderMinisterio de Ciencia y Tecnología (MCYT). España

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