dc.creator | Garcia-Belmonte, Germà | es |
dc.creator | Hinojo Montero, José María | es |
dc.creator | Barea, Eva María | es |
dc.creator | Bisquert, Juan | es |
dc.creator | Bolink, Hendrik J. | es |
dc.date.accessioned | 2021-10-25T17:36:15Z | |
dc.date.available | 2021-10-25T17:36:15Z | |
dc.date.issued | 2007-06 | |
dc.identifier.citation | Garcia-Belmonte, G., Hinojo Montero, J.M., Barea, E.M., Bisquert, J. y Bolink, H.J. (2007). Millisecond radiative recombination in poly(phenylene vinylene)-based light-emitting diodes from transient electroluminescence. Journal of Applied Physics, 101 (11), 114506-1-114506-7. | |
dc.identifier.issn | ISSN: 0021-8979 | es |
dc.identifier.issn | eISSN: 1089-7550 | es |
dc.identifier.uri | https://hdl.handle.net/11441/126836 | |
dc.description.abstract | The current and electroluminescence transient responses of standard poly phenylene
vinylene -based light-emitting devices have been investigated. The electroluminescence time
response is longer milliseconds scale than the current switch-off time by more than one order of
magnitude, in the case of small area devices 0.1 cm2 . For large area devices 6 cm2 the
electroluminescence decay time decreases from 1.45 ms to 100 s with increasing bias voltage.
The fast current decay limits the electroluminescence decay at higher voltages. Several approaches
are discussed to interpret the observed slow decrease of electroluminescence after turning off the
bias. One relies upon the Langevin-type bimolecular recombination kinetics which is governed by
the minority carriers electrons , and another focuses on the slow release of trapped electrons as
possible explanations. Additionally, we show that the device current density is mainly determined by
the transport of the fastest carriers (holes). | es |
dc.description.sponsorship | Ministerio de Educación y Ciencia de España MAT2004-038499 | es |
dc.format | application/pdf | es |
dc.format.extent | 7 p. | es |
dc.language.iso | eng | es |
dc.publisher | American Institute of Physics | es |
dc.relation.ispartof | Journal of Applied Physics, 101 (11), 114506-1-114506-7. | |
dc.rights | Attribution-NonCommercial-NoDerivatives 4.0 Internacional | * |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/4.0/ | * |
dc.subject | Bias voltage | es |
dc.subject | Carrier transport | es |
dc.subject | Electroluminescence | es |
dc.subject | Light emitting diodes | es |
dc.title | Millisecond radiative recombination in poly(phenylene vinylene)-based light-emitting diodes from transient electroluminescence | es |
dc.type | info:eu-repo/semantics/article | es |
dcterms.identifier | https://ror.org/03yxnpp24 | |
dc.type.version | info:eu-repo/semantics/publishedVersion | es |
dc.rights.accessRights | info:eu-repo/semantics/openAccess | es |
dc.contributor.affiliation | Universidad de Sevilla. Departamento de Ingeniería Electrónica | es |
dc.relation.projectID | MAT2004-038499 | es |
dc.relation.publisherversion | https://doi.org/10.1063/1.2743741 | es |
dc.identifier.doi | 10.1063/1.2743741 | es |
dc.journaltitle | Journal of Applied Physics | es |
dc.publication.volumen | 101 | es |
dc.publication.issue | 11 | es |
dc.publication.initialPage | 114506-1 | es |
dc.publication.endPage | 114506-7 | es |
dc.contributor.funder | Ministerio de Educación y Ciencia (MEC). España | es |
dc.contributor.funder | Generalitat Valenciana | es |