Artículo
Incorporation of Sb in InAs/GaAs quantum dots
Autor/es | Molina Rubio, Sergio Ignacio
Sánchez, A. M. Beltrán, Ana M. Sales, David L. Ben Fernández, Teresa Chisholm, M. F. Varela, María Pennycook, Stephen J. Galindo Riaño, Pedro Luis Papworth, A. J. Goodhew, P. J. Ripalda, José María |
Departamento | Universidad de Sevilla. Departamento de Ingeniería y Ciencia de los Materiales y del Transporte |
Fecha de publicación | 2007 |
Fecha de depósito | 2018-01-11 |
Resumen | The formation of a quaternary InGaAsSb alloy is shown to occur in the core of epitaxial GaSb capped InAs/GaAs quantum dots emitting at 1.3 m. The existence of the four constituent elements is demonstrated by using spatially ... The formation of a quaternary InGaAsSb alloy is shown to occur in the core of epitaxial GaSb capped InAs/GaAs quantum dots emitting at 1.3 m. The existence of the four constituent elements is demonstrated by using spatially resolved low-loss electron energy loss spectroscopy and aberration-corrected high angle annular dark field scanning transmission electron microscopy. The intermixing process giving rise to the formation of this quaternary alloy takes place despite the large miscibility gap between InAs and GaSb binary compounds, and is probably driven by the existence of strain in the quantum dots. |
Identificador del proyecto | NMP4-CT-2004-500101
TEC2005-05781-C03-01 y 02 NAN2004 -09109-C04-01 CSD2006-00019 and -0004 CAM S 0505ESP 0200 TEP-120 and TIC-145; Project No. PAI05-TEP-00383 |
Cita | Molina Rubio, S.I., Sánchez, A.M., Beltrán, A.M., Sales, D.L., Ben Fernández, T., Chisholm, M.F.,...,Ripalda, J.M. (2007). Incorporation of Sb in InAs/GaAs quantum dots. Applied Physics Letters, 91, 263105-1-263105-3. |
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