Artículo
STM-driven transition from rippled to buckled graphene in a spin-membrane model
Autor/es | Ruiz García, M.
López Bonilla, Luis Prados Montaño, Antonio |
Departamento | Universidad de Sevilla. Departamento de Física Atómica, Molecular y Nuclear |
Fecha de publicación | 2016 |
Fecha de depósito | 2017-04-26 |
Publicado en |
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Resumen | We consider a simple spin-membrane model for rippling in graphene. The model exhibits transitions from a flat but rippled membrane to a buckled one. At high temperature the transition is second order, but it is first order ... We consider a simple spin-membrane model for rippling in graphene. The model exhibits transitions from a flat but rippled membrane to a buckled one. At high temperature the transition is second order, but it is first order at low temperature for appropriate strength of the spin-spin coupling. Driving the system across the first-order phase transition in nonequilibrium conditions that mimic interaction of the graphene membrane with a scanning tunneling microscopy (STM) tip explains recent experiments. In particular, we observe a reversible behavior for small values of the STM current and an irreversible transition from a flat rippled membrane to a rigid buckled membrane when the current surpasses a critical value. This work makes it possible to test the mechanical properties of graphene under different temperature and electrostatic conditions. |
Agencias financiadoras | Ministerio de Economía y Competitividad (MINECO). España |
Identificador del proyecto | info:eu-repo/grantAgreement/MINECO/MTM2014-56948-C2-2-P |
Cita | Ruiz García, M., López Bonilla, L. y Prados Montaño, A. (2016). STM-driven transition from rippled to buckled graphene in a spin-membrane model. Physical Review B - Condensed Matter and Materials Physics, 94 (20), 205404-. |
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STM driven transition.pdf | 1.497Mb | [PDF] | Ver/ | |