Artículo
Atomic scale characterization of SiO2/4H-SiC interfaces in MOSFETs devices
Autor/es | Beltrán, Ana M.
Duguay, S Strenger, C Cristiano, F. Schamm-Chardon, S. Bauer, A.J. |
Departamento | Universidad de Sevilla. Departamento de Ingeniería y Ciencias de los Materiales y del Transporte |
Fecha de publicación | 2015 |
Fecha de depósito | 2018-04-10 |
Publicado en |
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Resumen | The breakthrough of 4H-SiC MOSFETs is stemmed mainly due to the mobility degradation in their channel in spite of the good physical intrinsic material properties. Here, two different n-channel 4H-SiC MOSFETs are characterized ... The breakthrough of 4H-SiC MOSFETs is stemmed mainly due to the mobility degradation in their channel in spite of the good physical intrinsic material properties. Here, two different n-channel 4H-SiC MOSFETs are characterized in order to analyze the elemental composition at the SiC/SiO2 interface and its relationship to their electrical properties. Elemental distribution analyses performed by EELS reveal the existence of a transition layer between the SiC and the SiO2 regions of the same width for both MOSFETs despite a factor of nearly two between their electron mobility. Additional 3D compositional mapping by atom probe tomography corroborates these results, particularly the absence of an anomalous carbon distribution around the SiC/SiO2 interface. |
Identificador del proyecto | 01SF0804 |
Cita | Beltrán, A.M., Duguay, S., Strenger, C., Cristiano, F., Schamm-Chardon, S. y Bauer, A.J. (2015). Atomic scale characterization of SiO2/4H-SiC interfaces in MOSFETs devices. Solid State Communications, 221, 28-32. |
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Atomic scale characterization.pdf | 396.6Kb | [PDF] | Ver/ | |